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VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 1 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 emipak-1b pressfit power module neutral point clamp topology, 30 a features ? ultrafast trench igbt technology ?hexfred ? and silicon carbide diode technology ? pressfit pins technology ?exposed al 2 o 3 substrate with lo w thermal resistance ? low internal inductances ? pressfit pins locking techno logy. patent # us.263.820 b2 ? ul approved file e78996 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description VS-ENQ030L120S is an integrated solution for a neutral point clamp topology in a si ngle package. the emipak-1b package is easy to use thanks to the pressfit pins and the exposed substrate provides impr oved thermal performance. the optimized layout also helps to minimize stray parameters, allowing for better emi performance. ? ? ? ? ? ? ? ? ? product summary trench igbt 1200 v stage v ces 1200 v v ce(on) typical at i c = 30 a 2.12 v i c at t c = 102 c 30 a trench igbt 600 v stage v ces 600 v v ce(on) typical at i c = 30 a 1.42 v i c at t c = 106 c 30 a speed 8 khz to 30 khz package emipak-1b circuit 3-levels neutral point clamp topology emipak-1b (packa g e example) absolute maximum ratings parameter symbol test conditions max. units operating junction temperature t j 150 c storage temperature range t stg -40 to +150 rms isolation voltage v isol t j = 25 c, all terminals shor ted, f = 50 hz, t = 1 s 3500 v q1 - q4 trench igbt 1200 v collector to em itter voltage v ces 1200 v gate to emi tter voltage v ges 30 pulsed collector current i cm 120 a clamped inductive load current i lm (1) 120 continuous drain current i c t c = 25 c 61 a t c = 80 c 40 t sink = 80 c 21 power dissi pation p d t c = 25 c 216 w t c = 80 c 121 ? patent(s): www.vishay.com/patents ? this vishay product is protected by one or more united states and international patents.
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 2 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? absolute maximum ratings indicate sustained limit s beyond which damage to the device may occur. (1) v cc = 600 v, v ge = 15 v, l = 500 h, r g = 4.7 ? , t j = 150 c (2) v cc = 300 v, v ge = 15 v, l = 500 h, r g = 4.7 ? , t j = 150 c ? ? ? parameter symbol test conditions max. units q2 - q3 trench igbt 600 v collector to em itter voltage v ces 600 v gate to emi tter voltage v ges 20 pulsed collector current i cm 130 a clamped inductive load current i lm (2) 130 continuous coll ector current i c t c = 25 c 64 a t c = 80 c 42 t sink = 80 c 25 power dissi pation p d t c = 25 c 174 w t c = 80 c 97 d1 - d4 hexfred antiparallel diode single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 180 a diode continuous forward current i f t c = 25 c 46 a t c = 80 c 30 t sink = 80 c 17 power dissipation p d t c = 25 c 187 w t c = 80 c 105 d2 - d3 silicon carbide antiparallel diode single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 150 a diode continuous forward current i f t c = 25 c 40 a t c = 80 c 28 t sink = 80 c 20 power dissipation p d t c = 25 c 140 w t c = 80 c 79 electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units q1 - q4 trench igbt 1200 v collector to emitter breakdown voltage bv ces v ge = 0 v, i c = 100 a 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 30 a - 2.12 2.52 v ge = 15 v, i c = 30 a, t j = 125 c - 2.31 - gate threshold voltage v ge(th) v ce = v ge , i c = 1.0 ma 2.6 4.6 6.6 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 14 - mv/c forward transconductance g fe v ce = 20 v, i c = 30 a - 36 - s transfer characteristics v ge v ce = 20 v, i c = 30 a - 7.1 - v zero gate voltage collector current i ces v ge = 0 v, v ce = 1200 v - 0.001 0.23 ma v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.5 - gate to emitter leakage current i ges v ge = 30 v, v ce = 0 v - - 200 na absolute maximum ratings
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 3 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 q2 - q3 trench igbt 600 v collector to emitter breakdown voltage bv ces v ge = 0 v, i c = 150 a 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 30 a - 1.42 1.87 v ge = 15 v, i c = 30 a, t j = 125 c - 1.56 - gate threshold voltage v ge(th) v ce = v ge , i c = 1.4 ma 3.6 5.6 7.1 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - -17 - mv/c forward transconductance g fe v ce = 20 v, i c = 30 a - 24 - s transfer characteristics v ge v ce = 20 v, i c = 30 a - 10 - v zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - 0.0003 0.23 ma v ge = 0 v, v ce = 600 v, t j = 125 c - 0.028 - gate to emitter leakage current i ges v ge = 20 v, v ce = 0 v - - 200 na d1 - d4 antiparallel diode forward voltage drop v fm i f = 20 a - 2.42 3.18 v i f = 20 a, t j = 125 c - 2.32 - d2 - d3 antiparallel diode forward voltage drop v fm i f = 20 a - 1.54 1.8 v i f = 20 a t j = 125 c - 1.86 - switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units q1 - q4 trench igbt (with freewheeling d1 - d4 antiparallel diode) total gate charge (turn-on) q g i c = 30 a v cc = 600 v v ge = 15 v -157- nc gate to emitter charge (turn-on) q ge -21- gate to collector charge (turn-on) q gc -69- turn-on switching loss e on i c = 30 a ? v cc = 600 v ? v ge = 15 v ? r g = 4.7 ?? l = 500 h (1) -0.52- mj turn-off switching loss e off -0.9- total switching loss e tot -1.42- turn-on delay time t d(on) -93- ns rise time t r -39- turn-off delay time t d(off) -133- fall time t f -156- turn-on switching loss e on i c = 30 a ? v cc = 600 v ? v ge = 15 v ? r g = 4.7 ?? l = 500 h ? t j = 125 c (1) -0.64- mj turn-off switching loss e off -1.61- total switching loss e tot 2.24 turn-on delay time t d(on) -93- ns rise time t r -39- turn-off delay time t d(off) -136- fall time t f -193- input capacitance c ies v ge = 0 v ? v cc = 30 v ? f = 1 mhz - 3338 - pf output capacitance c oes -124- reverse transfer capacitance c res -75- reverse bias safe operating area rbsoa t j = 150 c, i c = 120 a, v cc = 600 v, ? v p = 1200 v, r g = 4.7 ? , v ge = 15 v to 0 v fullsquare electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 4 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) energy losses include tail and diode reverse recovery. ? parameter symbol test conditions min. typ. max. units q2 - q3 trench igbt (with freewheeling external to-247 diode discrete 30eth06) total gate charge (turn-on) q g i c = 48 a v cc = 400 v v ge = 15 v -95- nc gate to emitter charge (turn-on) q ge -28- gate to collector charge (turn-on) q gc -35- turn-on switching loss e on i c = 30 a v cc = 300 v v ge = 15 v ? r g = 4.7 ?? l = 500 h (1) -0.23- mj turn-off switching loss e off -0.26- total switching loss e tot -0.49- turn-on delay time t d(on) -70- ns rise time t r -31- turn-off delay time t d(off) -91- fall time t f -87- turn-on switching loss e on i c = 30 a ? v cc = 300 v ? v ge = 15 v ? r g = 4.7 ?? l = 500 h ? t j = 125 c (1) -0.33- mj turn-off switching loss e off -0.48- total switching loss e tot -0.61- turn-on delay time t d(on) -70- ns rise time t r -31- turn-off delay time t d(off) -96- fall time t f -117- input capacitance c ies v ge = 0 v ? v cc = 30 v ? f = 1 mhz - 3025 - pf output capacitance c oes -245- reverse transfer capacitance c res -90- reverse bias safe operating area rbsoa t j = 150 c, i c = 130 a ? v cc = 300 v, v p = 600 v ? r g = 4.7 ? , v ge = 15 v to 0 v fullsquare d1 - d4 antiparallel diode diode reverse recovery time t rr v r = 400 v ? i f = 20 a ? dl/dt = 500 a/s -103- ns diode peak reverse current i rr -16- a diode recovery charge q rr -800- nc diode reverse recovery time t rr v r = 400 v ? i f = 20 a ? dl/dt = 500 a/s, t j = 125 c -135- ns diode peak reverse current i rr -21- a diode recovery charge q rr - 1412 - nc d2 - d3 antiparallel diode diode reverse recovery time t rr v r = 200 v ? i f = 20 a ? dl/dt = 500 a/s -30- ns diode peak reverse current i rr -4.8- a diode recovery charge q rr -73-nc diode reverse recovery time t rr v r = 200 v ? i f = 20 a ? dl/dt = 500 a/s, t j = 125 c -31- ns diode peak reverse current i rr -5- a diode recovery charge q rr -78-nc switching characteristics (t j = 25 c unless otherwise noted)
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 5 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounting surface flat, smooth, and greased fig. 1 - typical q1 - q4 trench igbt 1200 v output characteristics v ge = 15 v fig. 2 - typical q1 - q4 trench igbt 1200 v output characteristics t j = 125 c internal ntc - thermistor specifications parameter symbol test conditions value units resistance r 25 t c = 25 c 5000 ? r 100 t c = 100 c 493 5 % b-value b 25/50 r 2 = r 25 exp. [b 25/50 (1/t 2 - 1/(298.15 k))] 3375 5 % k maximum operating temperature 220 c dissipation constant 2mw/c thermal time constant 8s thermal and mechanical specifications parameter symbol min. typ. max. units q1 - q4 trench igbt 1200 v - junction to case thermal resistance (per switch) r thjc - - 0.58 c/w q2 - q3 trench igbt 600 v- junction to ca se thermal resistance (per switch) - - 0.72 d1 - d4 ap diode - junction to case thermal resistance (per diode) - - 0.67 d2 - d3 ap diode - junction to case thermal resistance (per diode) - - 0.89 q1 - q4 trench igbt 1200 v - case to sink thermal resistance (per switch) r thcs (1) -0.75- q2 - q3 trench igbt 600 v - case to sink thermal resistance (per switch) - 0.77 - d1 - d4 ap diode - case to sink th ermal resistance (per diode) - 0.78 - d2 - d3 ap diode - case to sink th ermal resistance (per diode) - 0.65 - case to sink thermal resistance (per module) - 0.1 - mounting torque (m4) 2-3nm weight -28-g v ce (v) i c (a) 0 5 10 15 20 25 30 35 40 45 50 60 55 0 1.0 1.5 2.0 2.5 3.5 3.0 4.0 t j = 150 c t j = 25 c t j = 125 c 0.5 v ce (v) i c (a) 60 15 20 25 30 35 40 45 50 55 0 5 10 15 v g e = 12 v v g e = 15 v v g e = 18 v v g e = 9 v 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 6 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - maximum q1 - q4 trench igbt 1200 v continuous collector curr ent vs. case temperature fig. 4 - typical q1 - q4 trench igbt 1200 v transfer characteristics fig. 5 - typical q1 - q4 trench igbt 1200 v gate threshold voltage fig. 6 - typical q1 - q4 trench igbt 1200 v zero gate voltage collector current fig. 7 - typical q1 - q4 trench igbt 1200 v energy loss vs. i c (with d1 - d4 freewheeling diode), t j = 125 c, v cc = 600 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 8 - typical q1 - q4 trench igbt 1200 v switching time vs. i c (with d1 - d4 freewheeling diode) t j = 125 c, v cc = 600 v, r g = 4.7 ? , v ge = 15 v, l = 500 h i c - continuous collector current (a) allowa b le case temperature (c) 160 140 40 60 80 100 120 dc 0 20 0 10 20 30 40 50 60 70 v g e (v) i c (a) 40 45 50 55 60 5 10 15 20 25 30 35 t j = 25 c t j = 125 c 0 4.0 5.0 6.0 7.0 8.0 9.0 v ce = 20 v v g eth (v) i c (ma) 3.5 4.0 4.5 5.0 5.5 2.0 2.5 3.0 t j = 25 c t j = 125 c 0.2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 i ce s (ma) 0.01 0.1 1 10 0.0001 0.001 t j = 25 c t j = 150 c t j = 125 c v ce s (v) 100 1200 1100 1000 900 800 700 600 500 400 300 200 i c (a) ener g y (mj) 3.0 3.5 0.5 1.0 1.5 2.0 2.5 e off e on 0 0 10 20 30 40 50 60 70 s witchin g time (ns) i c (a) 1000 10 100 0 10 20 30 40 50 60 70 t d(on) t d(off) t r t f
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 7 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - typical q1 - q4 trench igbt 1200 v energy loss vs. r g (with d1 - d4 freewheeling diode) t j = 125 c, v cc = 600 v, i c = 30 a, v ge = 15 v, l = 500 h fig. 10 - typical q1 - q4 trench igbt 1200 v switching time vs. r g (with d1 - d4 freewheeling diode) t j = 125 c, v cc = 600 v, i c = 30 a, v ge = 15 v, l = 500 h fig. 11 - typical d1 - d4 antiparallel diode forward characteristics fig. 12 - maximum d1 - d4 antiparallel diode forward current vs. case temperature fig. 13 - typical d1 - d4 antiparallel diode reverse recovery time vs. di f /dt v rr = 400 v, i f = 20 a fig. 14 - typical d1 - d4 antiparallel diode reverse recovery current vs. di f /dt v rr = 400 v, i f = 20 a r g ( ) ener g y (mj) 2.0 2.5 3.0 3.5 e on 0.5 1.0 1.5 0 5 10 15 20 25 30 35 40 45 50 55 e off s witchin g time (ns) r g ( ) 100 1000 10 0 5 10 15 20 25 30 35 40 45 50 55 t d(on) t d(off) t r t f v fm (v) i f (a) 50 60 0 10 20 30 40 5 0 t j = 25 c t j = 150 c t j = 125 c 0 0.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 4.5 i f - continuous forwar d current (a) allowa b le case temperature (c) 140 160 0 20 40 60 80 100 120 0 10 20 30 40 50 60 130 150 170 190 210 230 250 270 t rr (ns) 90 110 130 15 100 200 300 400 500 d i f / d t (a/s) 25 c 125 c 6 8 10 12 14 16 18 20 22 24 i rr (a) 4 6 8 100 200 300 400 500 d i f / d t (a/s) 25 c 125 c
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 8 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 15 - typical d1 - d4 antiparallel diode reverse recovery charge vs. di f /dt v rr = 400 v, i f = 20 a fig. 16 - maximum th ermal impe dance z thjc characteristics (q1 - q4 trench igbt 1200 v) fig. 17 - maximum thermal impedance z thjc characteristics (d1 - d4 antiparallel diode) q rr (nc) d i f / d t (a/s) 1700 300 500 700 900 1100 1300 1500 1700 100 200 300 400 500 25 c 125 c t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 0.1 1 10 0.001 0.01 0. 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 dc t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 0.1 1 10 0.001 0.01 0. 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 dc
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 9 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 18 - typical q2 - q3 trench igbt 600 v output characteristics v ge = 15 v fig. 19 - typical q2 - q3 trench igbt 600 v output characteristics t j = 125 c fig. 20 - maximum q2 - q3 trench igbt 600 v continuous collector curr ent vs. case temperature fig. 21 - typical q2 - q3 trench igbt 600 v transfer characteristics fig. 22 - typical q2 - q3 trench igbt 600 v gate threshold voltage fig. 23 - typical q2 - q3 trench igbt 600 v zero gate voltage collector current v ce (v) i c (a) 2 25 30 35 40 45 50 55 60 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 t j = 150 c t j = 25 c t j = 125 c v ce (v) i c (a) 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.5 1.0 1.5 2.0 2.5 3.0 v g e = 15 v v g e = 12 v v g e = 9 v v g e = 18 v i c - continuous collector current (a) allowa b le case temperature (c) 0 20 40 60 80 100 120 140 160 0 1020304050607080 dc v g e (v) i ce (a) 0 5 10 15 20 25 30 35 40 45 50 60 55 5 7 8 9 10 12 11 13 t j = 25 c t j = 125 c 6 v ce = 20 v v g eth (v) i c (ma) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 t j = 25 c t j = 125 c v ce s (v) i ce s (ma) 0.00001 0.0001 0.001 0.01 0.1 1 100 200 300 400 500 600 t j = 25 c t j = 125 c t j = 150 c
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 10 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 24 - typical d2 - d3 antiparallel diode forward characteristics fig. 25 - maximum d2 - d3 antiparallel diode forward current vs. case temperature fig. 26 - typical q2 - q3 trench igbt 600 v energy loss vs. i c (with freewheeling external to -247 diode discrete 30eth06 ) t j = 125 c, v cc = 300 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 27 - typical q2 - q3 trench igbt 600 v switching time vs. i c (with freewheeling external to-247 diode discrete 30eth06) t j = 125 c, v cc = 300 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 28 - typical q2 - q3 trench igbt 600 v energy loss vs. r g (with freewheeling external to-247 diode discrete 30eth06) t j = 125 c, v cc = 300 v, i c =30 a, v ge = 15 v, l = 500 h fig. 29 - typical q2 - q3 trench igbt 600 v switching time vs. r g (with freewheeling external to-247 diode discrete 30eth06) t j = 125 c, v cc = 300 v, i c = 30 a, v ge = 15 v, l = 500 h v fm (v) i f (a) 0 5 10 15 20 25 30 35 40 45 50 55 60 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j = 25 c t j = 150 c t j = 125 c 0.5 i f - continuous forwar d current (a) allowa b le case temperature (c) 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 45 50 i c (a) ener g y (mj) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10203040506070 e on e off s witchin g time (ns) i c (a) 10 100 1000 0 10203040506070 t d(off) t d(on) t f t r r g ( ) ener g y (mj) 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0 5 10 15 20 25 30 35 40 45 50 55 e on e off s witchin g time (ns) r g ( ) 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 t d(off) t d(on) t f t r
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 11 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 30 - typical d2 - d3 antiparallel diode reverse recovery time vs. di f /dt v rr = 200 v, i f = 20 a fig. 31 - typical d2 - d3 antiparallel diode reverse recovery current vs. di f /dt v rr = 200 v, i f = 20 a fig. 32 - typical d2 - d3 antiparallel diode reverse recovery charge vs. di f /dt v rr = 200 v, i f = 20 a fig. 33 - maximum thermal impedance z thjc characteristics (q2 - q3 trench igbt 600 v) t rr (ns) d i f / d t (a/s) 20 25 30 35 40 45 50 55 60 65 70 75 80 100 200 300 400 500 25 c 125 c i rr (a) d i f / d t (a/s) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 100 200 300 400 500 25 c 125 c 60 65 70 75 80 85 90 100 200 300 400 500 25 c 125 c q rr (nc) d i f / d t (a/s) t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 0.1 1 10 0.001 0.01 0. 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 dc
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 12 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 34 - maximum thermal impedance z thjc characteristics (d2 - d3 antiparallel diode) ordering information table t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 0.1 1 10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 dc 1 - vishay semiconductors product 2 - package indicator (en = emipak-1b) 3 - circuit configuration (q = neutral point clamp topology) 4 - current rating (030 = 30 a) 5 - switch die technology (l = ultrafast trench igbt 1200 v and trench igbt 600 v) 6 - voltage rating (120 = 1200 v) 7 - diode die technology (s = sic diode) device code 5 1 3 2 4 6 7 vs- en q 030 l 120 s
VS-ENQ030L120S www.vishay.com vishay semiconductors revision: 16-jun-16 13 document number: 94684 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration package links to related documents dimensions www.vishay.com/doc?95558 dc+ dc+ m d2 e3 g 3 e1 g 1 q 2 q 3 q 1 d1 t1 t2 br br br d3 m dc- dc- e4 g 4 q 4 d4 16 16 12.8 12.8 9.6 3.2 3.2 t1 t2 br br br g 4e4 e1 g 1 mm dc- dc- dc+ dc+ g 3 g 2 e3 e2 3.2 3.2 9.6 12.8 12.8
outline dimensions www.vishay.com vishay semiconductors revision: 27-jun-14 1 document number: 95558 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 emipak-1b pressfit dimensions in millimeters 6.4 33.8 0.3 30.9 0.5 28.1 0.2 20.4 16.4 6.4 9.6 9.6 12.8 12.8 3.2 3.2 6.4 6.4 9.6 9.6 12.8 12.8 16 16 3.2 3.2 12 0.35 3 0.15 4.1 0.3 0.4 ? 4.4 0.1 pin po s ition 62.8 0.5 48 0.3 ? 2.1 x 8.5 53 0.15 42.5 0.2 37 0.5
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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